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Dr.
Vic Temple
Dr. Vic Temple is currently Senior VP for Technology at Silicon Power Corporation,
responsible for advanced technology development. His research lab is located in Clifton Park, NY. Prior to joining Silicon Power, Dr.
Temple spent 8 years as the Director of Harris’ Power R&D Center in
Latham, New York. Harris Power
R&D Center was formed by Dr. Temple from the GE R&D Center power
semiconductor device and packaging groups, Niskayuna, New York. Dr. Temple had joined GE R&D in
1974.
Dr. Temple received his
MEng with a thesis on Self-Adapting Control Systems and a PhD in Physics
with a thesis on Silicon MIS and SIS properties from McMaster University in
Hamilton, Ontario, Canada.
Dr. Temple’s IC-Foundry
fabricated “Super” GTO, which promises smaller size, lower losses and
higher speed power switching at high voltage, was an 2007 IR-100 award winner. Exploiting this new device and expanding
its applications are a key focus for Dr. Temple and Silicon Power.
Technologies that Dr.
Temple has invented and transitioned into products include the
light-triggered thyristor (LTT) used in high voltage DC transmission
systems, and the Junction Termination Extension (JTE), now used in many, if
not most, silicon and silicon carbide high voltage devices to ensure
near-ideal, reliable voltage blocking capacity.
Dr. Temple has 81 U.S.
Patents on semiconductor devices, packaging and applications, and has
published over 150 pages in journals or IEEE meeting proceedings and has
contributed to several books. Dr.
Temple has received some of the semiconductor industry’s most prestigious
awards including an R&D 100 award from R&D Magazine. He was also been recognized by Electronic
Device News as one of the 1993 Inventors of the Year for his invention
and development of the MOS Controlled Thyristor (MCT), a device that was
once featured on the cover of Scientific American.
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